Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors

Sangwoo Kang; Nitin Prasad; Hema C. P. Movva; Amritesh Rai; Kyounghwan Kim; Xuehao Mou; Takashi Taniguchi; Kenji Watanabe; Leonard F. Register; Emanuel Tutuc; Sanjay K. Banerjee; Sangwoo Kang; Nitin Prasad; Hema C. P. Movva; Amritesh Rai; Kyounghwan Kim; Xuehao Mou; Takashi Taniguchi; Kenji Watanabe; Leonard F. Register; Emanuel Tutuc; Sanjay K. Banerjee

doi:10.1021/acs.nanolett.6b01646

Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene–hBN–Graphene Interlayer Tunnel Field Effect Transistors

Sangwoo Kang, Nitin Prasad, Hema C. P. Movva, Amritesh Rai, Kyounghwan Kim, Xuehao Mou, Takashi Taniguchi, Kenji Watanabe, Leonard F. Register, Emanuel Tutuc, Sanjay K. Banerjee.

Nano Letters 16 [8] 4975-4981. 2016.

https://doi.org/10.1021/acs.nanolett.6b01646

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-11-15 21:39:03 +0900Updated at: 2024-04-30 05:49:39 +0900