Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Selective etching of hexagonal boron nitride by high-pressure CF4 plasma for individual one-dimensional ohmic contacts to graphene layers

Yuta Seo, Satoru Masubuchi, Eisuke Watanabe, Momoko Onodera, Rai Moriya, Kenji Watanabe, Takashi Taniguchi, Tomoki Machida.

Applied Physics Letters 117 [24] 243101. 2020.

https://doi.org/10.1063/5.0022557

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作成時刻: 2020-12-16 03:00:17 +0900 更新時刻: 2026-10-30 06:00:10 +0900

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