Interface engineering of HfO <sub>2</sub> -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO <sub>2</sub> nucleation layers | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Interface engineering of HfO ₂ -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO ₂ nucleation layers

Takashi Onaya, Toshihide Nabatame.

Japanese Journal of Applied Physics 65 [8] 080804. 2026.

https://doi.org/10.35848/1347-4065/ae5662

Open Access IOP Publishing (Publisher) Materials Data Repository (MDR)

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Materials Data Repository (MDR)上の本文・データセット

MDRavailable Interface engineering of HfO <sub>2</sub> -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO <sub>2</sub> nucleation layers

作成時刻: 2026-06-18 03:05:53 +0900 更新時刻: 2026-07-19 04:34:11 +0900

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