HOME > 論文 > 書誌詳細Characteristics of Several High-k Gate Insulators for GaN Power DeviceNABATAME, Toshihide. ECS Transactions 109-117. 2019.https://doi.org/10.1149/09204.0109ecs NIMS著者生田目 俊秀Materials Data Repository (MDR)上の本文・データセット作成時刻: 2022-11-15 00:41:25 +0900更新時刻: 2024-08-10 10:00:07 +0900
