HOME > Article > DetailCharacteristics of Several High-k Gate Insulators for GaN Power DeviceNABATAME, Toshihide. ECS Transactions 109-117. 2019.https://doi.org/10.1149/09204.0109ecs NIMS author(s)NABATAME, ToshihideFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-11-15 00:41:25 +0900Updated at: 2024-04-02 06:56:47 +0900