HOME > 論文 > 書誌詳細rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect TransistorsA. Inhofer, J. Duffy, M. Boukhicha, E. Bocquillon, J. Palomo, K. Watanabe, T. Taniguchi, I. Estève, J. M. Berroir, G. Fève, B. Plaçais, B. A. Assaf. Physical Review Applied 9 [2] 024022. 2018.https://doi.org/10.1103/physrevapplied.9.024022 NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻: 2018-04-03 21:07:01 +0900更新時刻: 2024-03-30 01:12:01 +0900