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rf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect Transistors

A. Inhofer, J. Duffy, M. Boukhicha, E. Bocquillon, J. Palomo, K. Watanabe, T. Taniguchi, I. Estève, J. M. Berroir, G. Fève, B. Plaçais, B. A. Assaf.
Physical Review Applied 9 [2] 024022. 2018.

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    Created at: 2018-04-03 21:07:01 +0900Updated at: 2024-04-30 05:52:48 +0900

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