HOME > Article > Detailrf Quantum Capacitance of the Topological Insulator Bi2Se3 in the Bulk Depleted Regime for Field-Effect TransistorsA. Inhofer, J. Duffy, M. Boukhicha, E. Bocquillon, J. Palomo, K. Watanabe, T. Taniguchi, I. Estève, J. M. Berroir, G. Fève, B. Plaçais, B. A. Assaf. Physical Review Applied 9 [2] 024022. 2018.https://doi.org/10.1103/physrevapplied.9.024022 NIMS author(s)WATANABE, KenjiTANIGUCHI, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2018-04-03 21:07:01 +0900Updated at: 2024-04-30 05:52:48 +0900