Complementary Trilayer–Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Subthermionic Subthreshold Swing | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Complementary Trilayer–Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Subthermionic Subthreshold Swing
(Complementary Trilayer-Bulk Black Phosphorus Heterojunction Tunnel Field-Effect Transistor with Sub-thermionic Subthreshold Swing)

Seungho Kim, Gyuho Myeong, Jeehoon Park, Taehyuk Jin, Kenji Watanabe, Takashi Taniguchi, Chulho Lee, Sungjae Cho.

ACS Applied Electronic Materials 2 [11] 3491-3496. 2020.

https://doi.org/10.1021/acsaelm.0c00603

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作成時刻: 2021-10-06 03:32:42 +0900更新時刻: 2024-04-02 04:49:32 +0900

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