High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts

Muhammad Atif Khan; Servin Rathi; Changhee Lee; Yunseob Kim; Hanul Kim; Dongmok Whang; Sun Jin Yun; Doo-Hyeb Youn; Kenji Watanabe; Takashi Taniguchi; Gil-Ho Kim

doi:10.1088/1361-6528/aad0af

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High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts

Muhammad Atif Khan, Servin Rathi, Changhee Lee, Yunseob Kim, Hanul Kim, Dongmok Whang, Sun Jin Yun, Doo-Hyeb Youn, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim.

Nanotechnology 29 [39] 395201. 2018.

https://doi.org/10.1088/1361-6528/aad0af

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作成時刻: 2018-08-22 15:09:36 +0900更新時刻: 2024-04-01 23:17:20 +0900