High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts

Muhammad Atif Khan; Servin Rathi; Changhee Lee; Yunseob Kim; Hanul Kim; Dongmok Whang; Sun Jin Yun; Doo-Hyeb Youn; Kenji Watanabe; Takashi Taniguchi; Gil-Ho Kim; Muhammad Atif Khan; Servin Rathi; Changhee Lee; Yunseob Kim; Hanul Kim; Dongmok Whang; Sun Jin Yun; Doo-Hyeb Youn; Kenji Watanabe; Takashi Taniguchi; Gil-Ho Kim

doi:10.1088/1361-6528/aad0af

High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts

Muhammad Atif Khan, Servin Rathi, Changhee Lee, Yunseob Kim, Hanul Kim, Dongmok Whang, Sun Jin Yun, Doo-Hyeb Youn, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim.

Nanotechnology 29 [39] 395201. 2018.

https://doi.org/10.1088/1361-6528/aad0af

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2018-08-22 15:09:36 +0900 Updated at: 2026-11-04 05:46:43 +0900