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著者名Takumi Moriyama, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, Kentaro Kinoshita.
タイトルFormation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results
掲載誌名MRS Advances 1 [49] 3367-3372
ISSN: 20598521
発表年2016
言語English
ESIでのカテゴリ
DOIhttps://doi.org/10.1557/adv.2016.461
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