HOME > Article > DetailFormation Mechanism of Conducting Path in Resistive Random Access Memory by First Principles Calculation Using Practical Model Based on Experimental Results(実験結果に基づいた実際的モデルを使った第一原理計算による抵抗変化メモリの導電経路形成機構)Takumi Moriyama, Takahiro Yamasaki, Takahisa Ohno, Satoru Kishida, Kentaro Kinoshita. MRS Advances 1 [49] 3367-3372. 2016.https://doi.org/10.1557/adv.2016.461 NIMS author(s)OHNO, TakahisaFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-02-19 23:20:54 +0900 Updated at :2024-03-29 22:21:46 +0900