Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMn                 x               As through hard X-ray angle-resolved photoemission

A. X. Gray; J. Minár; S. Ueda; P. R. Stone; Y. Yamashita; J. Fujii; J. Braun; L. Plucinski; C. M. Schneider; G. Panaccione; H. Ebert; O. D. Dubon; K. Kobayashi; C. S. Fadley

doi:10.1038/nmat3450

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Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission
(Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMn x As through hard X-ray angle-resolved photoemission)

A. X. Gray, J. Minár, S. Ueda, P. R. Stone, Y. Yamashita, J. Fujii, J. Braun, L. Plucinski, C. M. Schneider, G. Panaccione, H. Ebert, O. D. Dubon, K. Kobayashi, C. S. Fadley.

Nature Materials 11 [11] 957-962. 2012.

https://doi.org/10.1038/nmat3450

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 16:31:59 +0900更新時刻: 2024-04-02 05:01:10 +0900

Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission(Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMn x As through hard X-ray angle-resolved photoemission)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission
(Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMn x As through hard X-ray angle-resolved photoemission)