Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission

A. X. Gray; J. Minár; S. Ueda; P. R. Stone; Y. Yamashita; J. Fujii; J. Braun; L. Plucinski; C. M. Schneider; G. Panaccione; H. Ebert; O. D. Dubon; K. Kobayashi; C. S. Fadley; A. X. Gray; J. Minár; S. Ueda; P. R. Stone; Y. Yamashita; J. Fujii; J. Braun; L. Plucinski; C. M. Schneider; G. Panaccione; H. Ebert; O. D. Dubon; K. Kobayashi; C. S. Fadley

doi:10.1038/nmat3450

Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission
(Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMn x As through hard X-ray angle-resolved photoemission)

A. X. Gray, J. Minár, S. Ueda, P. R. Stone, Y. Yamashita, J. Fujii, J. Braun, L. Plucinski, C. M. Schneider, G. Panaccione, H. Ebert, O. D. Dubon, K. Kobayashi, C. S. Fadley.

Nature Materials 11 [11] 957-962. 2012.

https://doi.org/10.1038/nmat3450

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 16:31:59 +0900Updated at: 2024-12-15 06:49:30 +0900

Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission(Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMn x As through hard X-ray angle-resolved photoemission)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMnxAs through hard X-ray angle-resolved photoemission
(Bulk electronic structure of the dilute magnetic semiconductor Ga1−xMn x As through hard X-ray angle-resolved photoemission)