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High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
(High Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors)

Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, Sanjay K. Banerjee.
ACS Nano 9 [10] 10402-10410. 2015.
https://doi.org/10.1021/acsnano.5b04611

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    作成時刻: 2016-05-24 17:57:50 +0900更新時刻: 2024-03-29 18:45:51 +0900

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