High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
(High Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors)
| 著者 | Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, Sanjay K. Banerjee. |
|---|---|
| 掲載誌名 | ACS Nano 9 [10] 10402-10410 ISSN: 1936086X, 19360851 ESIでのカテゴリ: MATERIALS SCIENCE |
| 出版社 | American Chemical Society (ACS) |
| 発表年 | 2015 |
| 言語 | English |
| DOI | https://doi.org/10.1021/acsnano.5b04611 |
| この文献をMendeleyにインポート |  |