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High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
(High Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors)

Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, Sanjay K. Banerjee.
ACS Nano 9 [10] 10402-10410. 2015.
Open Access

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    作成時刻 :2016-05-24 17:57:50 +0900 更新時刻 :2020-11-16 22:34:28 +0900

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