High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
(High Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors)
| Author(s) | Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, Sanjay K. Banerjee. |
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| Journal title | ACS Nano 9 [10] 10402-10410 ISSN: 1936086X, 19360851 ESI category: MATERIALS SCIENCE |
| Publisher | American Chemical Society (ACS) |
| Year of publication | 2015 |
| Language | English |
| DOI | https://doi.org/10.1021/acsnano.5b04611 |
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