SAMURAI - NIMS Researchers Database

HOME > Article > Detail

High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
(High Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors)

Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, Sanjay K. Banerjee.
ACS Nano 9 [10] 10402-10410. 2015.
https://doi.org/10.1021/acsnano.5b04611

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

    Created at: 2016-05-24 17:57:50 +0900Updated at: 2024-03-29 18:45:51 +0900

    ▲ Go to the top of this page