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High-Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors
(High Mobility Holes in Dual-Gated WSe2 Field-Effect Transistors)

Author(s)Hema C. P. Movva, Amritesh Rai, Sangwoo Kang, Kyounghwan Kim, Babak Fallahazad, Takashi Taniguchi, Kenji Watanabe, Emanuel Tutuc, Sanjay K. Banerjee.
Journal titleACS Nano 9 [10] 10402-10410
ISSN: 1936086X, 19360851
ESI category: MATERIALS SCIENCE
PublisherAmerican Chemical Society (ACS)
Year of publication2015
LanguageEnglish
DOIhttps://doi.org/10.1021/acsnano.5b04611
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