Linfeng Sun; Genuwoo Hwang; Wooseon Choi; Gyeongtak Han; Yishu Zhang; Jinbao Jiang; Shoujun Zheng; Kenji Watanabe; Takashi Taniguchi; Mali Zhao; Rong Zhao; Young-Min Kim; Heejun Yang

doi:10.1016/j.nanoen.2020.104472

Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

著者	Linfeng Sun, Genuwoo Hwang, Wooseon Choi, Gyeongtak Han, Yishu Zhang, Jinbao Jiang, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Mali Zhao, Rong Zhao, Young-Min Kim, Heejun Yang.
掲載誌名	Nano Energy 69 104472 ISSN: 22112855 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	Elsevier BV
発表年	2020
言語	English
DOI	https://doi.org/10.1016/j.nanoen.2020.104472
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