Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

Linfeng Sun; Genuwoo Hwang; Wooseon Choi; Gyeongtak Han; Yishu Zhang; Jinbao Jiang; Shoujun Zheng; Kenji Watanabe; Takashi Taniguchi; Mali Zhao; Rong Zhao; Young-Min Kim; Heejun Yang

doi:10.1016/j.nanoen.2020.104472

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Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

Linfeng Sun, Genuwoo Hwang, Wooseon Choi, Gyeongtak Han, Yishu Zhang, Jinbao Jiang, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Mali Zhao, Rong Zhao, Young-Min Kim, Heejun Yang.

Nano Energy 69 104472. 2020.

https://doi.org/10.1016/j.nanoen.2020.104472

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2020-05-26 03:00:18 +0900更新時刻: 2024-10-06 05:52:38 +0900