Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

Linfeng Sun; Genuwoo Hwang; Wooseon Choi; Gyeongtak Han; Yishu Zhang; Jinbao Jiang; Shoujun Zheng; Kenji Watanabe; Takashi Taniguchi; Mali Zhao; Rong Zhao; Young-Min Kim; Heejun Yang; Linfeng Sun; Genuwoo Hwang; Wooseon Choi; Gyeongtak Han; Yishu Zhang; Jinbao Jiang; Shoujun Zheng; Kenji Watanabe; Takashi Taniguchi; Mali Zhao; Rong Zhao; Young-Min Kim; Heejun Yang

doi:10.1016/j.nanoen.2020.104472

Ultralow switching voltage slope based on two-dimensional materials for integrated memory and neuromorphic applications

Linfeng Sun, Genuwoo Hwang, Wooseon Choi, Gyeongtak Han, Yishu Zhang, Jinbao Jiang, Shoujun Zheng, Kenji Watanabe, Takashi Taniguchi, Mali Zhao, Rong Zhao, Young-Min Kim, Heejun Yang.

Nano Energy 69 104472. 2020.

https://doi.org/10.1016/j.nanoen.2020.104472

Open Access Elsevier BV (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2020-05-26 03:00:18 +0900Updated at: 2024-03-31 01:58:42 +0900