HOME > 論文 > 書誌詳細Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2 X. L. Yuan, T. Sekiguchi, J. Niitsuma, Y. Sakuma, S. Ito, S. G. Ri. Applied Physics Letters 86 [16] 162102. 2005.https://doi.org/10.1063/1.1905802 NIMS著者佐久間 芳樹Materials Data Repository (MDR)上の本文・データセット作成時刻 :2016-05-24 14:46:20 +0900 更新時刻 :2020-11-16 23:00:26 +0900