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Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2

X. L. Yuan, T. Sekiguchi, J. Niitsuma, Y. Sakuma, S. Ito, S. G. Ri.
Applied Physics Letters 86 [16] 162102. 2005.

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    作成時刻 :2016-05-24 14:46:20 +0900 更新時刻 :2020-11-16 23:00:26 +0900

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