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Inhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2

X. L. Yuan, T. Sekiguchi, J. Niitsuma, Y. Sakuma, S. Ito, S. G. Ri.
Applied Physics Letters 86 [16] 162102. 2005.

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