HOME > Article > DetailInhomogeneous distribution of dislocations in a SiGe graded layer and its influence on surface morphology and misfit dislocations at the interface of strained Si/Si0.8Ge0.2 X. L. Yuan, T. Sekiguchi, J. Niitsuma, Y. Sakuma, S. Ito, S. G. Ri. Applied Physics Letters 86 [16] 162102. 2005.https://doi.org/10.1063/1.1905802 NIMS author(s)SAKUMA, YoshikiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2016-05-24 14:46:20 +0900 Updated at :2020-11-16 23:00:26 +0900