Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS<sub>2</sub> Field Effect Transistors

Sungwon Lee; Xinbiao Wang; Hoseong Shin; Nasir Ali; Tien Dat Ngo; Euyheon Hwang; Gil-Ho Kim; Geun Young Yeom; Kenji Watanabe; Takashi Taniguchi; Won Jong Yoo; Sungwon Lee; Xinbiao Wang; Hoseong Shin; Nasir Ali; Tien Dat Ngo; Euyheon Hwang; Gil-Ho Kim; Geun Young Yeom; Kenji Watanabe; Takashi Taniguchi; Won Jong Yoo

doi:10.1021/acsaelm.4c00250

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Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS₂ Field Effect Transistors

Sungwon Lee, Xinbiao Wang, Hoseong Shin, Nasir Ali, Tien Dat Ngo, Euyheon Hwang, Gil-Ho Kim, Geun Young Yeom, Kenji Watanabe, Takashi Taniguchi, Won Jong Yoo.

ACS Applied Electronic Materials 6 [6] 4149-4158. 2024.

https://doi.org/10.1021/acsaelm.4c00250

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作成時刻: 2024-12-24 03:17:02 +0900 更新時刻: 2026-10-15 04:32:49 +0900

Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS2 Field Effect Transistors

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Semi-Metal Edge Contact for Barrier-Free Carrier Transport in MoS₂ Field Effect Transistors