Controllable Magnetic Proximity Effect and Charge Transfer in Monolayer MoSe2 and Perovskite Manganese Oxide van der Waals Heterostructure

Yan Zhang; Keisuke Shinokita; Kenji Watanabe; Takashi Taniguchi; Masato Goto; Daisuke Kan; Yuichi Shimakawa; Yutaka Moritomo; Taishi Nishihara; Yuhei Miyauchi; Kazunari Matsuda

doi:10.1002/adma.202003501

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Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double‐Layered Perovskite Manganese Oxide van der Waals Heterostructure
(Controllable Magnetic Proximity Effect and Charge Transfer in Monolayer MoSe2 and Perovskite Manganese Oxide van der Waals Heterostructure)

Yan Zhang, Keisuke Shinokita, Kenji Watanabe, Takashi Taniguchi, Masato Goto, Daisuke Kan, Yuichi Shimakawa, Yutaka Moritomo, Taishi Nishihara, Yuhei Miyauchi, Kazunari Matsuda.

Advanced Materials 32 [50] 2003501. 2020.

https://doi.org/10.1002/adma.202003501

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2021-07-14 03:00:24 +0900更新時刻: 2024-04-02 03:37:02 +0900

Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double‐Layered Perovskite Manganese Oxide van der Waals Heterostructure(Controllable Magnetic Proximity Effect and Charge Transfer in Monolayer MoSe2 and Perovskite Manganese Oxide van der Waals Heterostructure)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Controllable Magnetic Proximity Effect and Charge Transfer in 2D Semiconductor and Double‐Layered Perovskite Manganese Oxide van der Waals Heterostructure
(Controllable Magnetic Proximity Effect and Charge Transfer in Monolayer MoSe2 and Perovskite Manganese Oxide van der Waals Heterostructure)