Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy

著者	Elaheh Ahmadi, Yuichi Oshima, Feng Wu, James S Speck.
掲載誌名	Semiconductor Science and Technology 32 [3] 035004
出版社	IOP Publishing
発表年	2017
言語	English
DOI	https://doi.org/10.1088/1361-6641/aa53a7
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