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Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy

著者Elaheh Ahmadi, Yuichi Oshima, Feng Wu, James S Speck.
掲載誌名Semiconductor Science and Technology 32 [3] 035004
出版社IOP Publishing
発表年2017
言語English
DOIhttps://doi.org/10.1088/1361-6641/aa53a7
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