Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy
(MBE成長による β-(AlxGa1-x)2O3とNi電極のショットキーバリア高さのAl組成依存性)
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-27 00:45:30 +0900 Updated at: 2026-11-02 05:46:23 +0900