SAMURAI - NIMS Researchers Database

HOME > Article > Detail

Schottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy
(MBE成長による β-(AlxGa1-x)2O3とNi電極のショットキーバリア高さのAl組成依存性)

Elaheh Ahmadi, Yuichi Oshima, Feng Wu, James S Speck.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at :2017-02-27 00:45:30 +0900 Updated at :2024-03-29 21:46:13 +0900

    ▲ Go to the top of this page