HOME > Article > DetailSchottky barrier height of Ni toβ-(AlxGa1−x)2O3with different compositions grown by plasma-assisted molecular beam epitaxy(MBE成長による β-(AlxGa1-x)2O3とNi電極のショットキーバリア高さのAl組成依存性)Elaheh Ahmadi, Yuichi Oshima, Feng Wu, James S Speck. Semiconductor Science and Technology 32 [3] 035004. 2017.https://doi.org/10.1088/1361-6641/aa53a7 NIMS author(s)OSHIMA, YuichiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-02-27 00:45:30 +0900 Updated at :2024-03-29 21:46:13 +0900