Growth of GaAs Epitaxial Microcrystals on a S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams. | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Growth of GaAs Epitaxial Microcrystals on a S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams.
(S終端Ga,As分子線連続供給によるGa,Asエピタキシャル微結晶成長.)

Nobuyuki Koguchi, ONISHI, Keiko, Keiko Ishige.

Japanese Journal of Applied Physics 32 [Part 1, No. 5A] 2052-2058. 1993.

https://doi.org/10.1143/jjap.32.2052

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作成時刻: 2016-05-24 11:33:36 +0900更新時刻: 2024-04-01 21:49:41 +0900

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