HOME > Article > DetailGrowth of GaAs Epitaxial Microcrystals on a S-Terminated GaAs Substrate by Successive Irradiation of Ga and As Molecular Beams.(S終端Ga,As分子線連続供給によるGa,Asエピタキシャル微結晶成長.)Nobuyuki Koguchi, ONISHI, Keiko, Keiko Ishige. Japanese Journal of Applied Physics 32 [Part 1, No. 5A] 2052-2058. 1993.https://doi.org/10.1143/jjap.32.2052 NIMS author(s)ONISHI, KeikoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 11:33:36 +0900Updated at: 2024-05-02 08:34:24 +0900