HOME > 論文 > 書誌詳細Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors(Full energy spectra of interface states density for n- and p-type MoS2 field-effect transistors)Nan Fang, Satoshi Toyoda, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. Advanced Functional Materials 29 [49] 1904465. 2019.https://doi.org/10.1002/adfm.201904465 NIMS著者谷口 尚渡邊 賢司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2019-12-10 03:00:19 +0900更新時刻: 2024-03-31 01:16:15 +0900