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Full Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors
(Full energy spectra of interface states density for n- and p-type MoS2 field-effect transistors)

Nan Fang, Satoshi Toyoda, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio.
Advanced Functional Materials 29 [49] 1904465. 2019.

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Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2019-12-10 03:00:19 +0900 Updated at: 2026-10-30 05:23:20 +0900

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