HOME > Article > DetailFull Energy Spectra of Interface State Densities for n ‐ and p ‐type MoS 2 Field‐Effect Transistors(Full energy spectra of interface states density for n- and p-type MoS2 field-effect transistors)Nan Fang, Satoshi Toyoda, Takashi Taniguchi, Kenji Watanabe, Kosuke Nagashio. Advanced Functional Materials 29 [49] 1904465. 2019.https://doi.org/10.1002/adfm.201904465 NIMS author(s)TANIGUCHI, TakashiWATANABE, KenjiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2019-12-10 03:00:19 +0900 Updated at: 2026-10-30 05:23:20 +0900