HOME > 論文 > 書誌詳細Isotope effect of penetration of hydrogen and deuterium into silicon through Si/Sio2 interface(Si/SiO2界面を通したSi中への水素、重水素進入過程の同位体効果)Kouichi Murakami, Naoki Fukata, Kunie Ishioka, Masahiro Kitajima, Noriyuki Uchida, Kunitomo Morisawa, Haruhito Morihiro, Ryota Shirakawa, Masatoshi Tsujimura. Japanese Journal of Applied Physics 48 [9] 091204. 2009.https://doi.org/10.1143/jjap.48.091204 NIMS著者深田 直樹石岡 邦江Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 15:58:53 +0900更新時刻: 2024-03-30 01:26:57 +0900