Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors
(Correlation between active layer thickness and ambient gas effect in IGZO thin-film transistors)

Xu Gao, Meng-Fang Lin, Bao-Hua Mao, Maki Shimizu, Nobuhiko Mitoma, Takio Kizu, Wei Ou-Yang, Toshihide Nabatame, Zhi Liu, Kazuhito Tsukagoshi, Sui-Dong Wang.

Journal of Physics D: Applied Physics 50 [2] 025102. 2017.

https://doi.org/10.1088/1361-6463/50/2/025102

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作成時刻: 2016-12-16 23:11:15 +0900 更新時刻: 2026-09-30 05:00:33 +0900

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