Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Alex Summerfield; Andrew Davies; Tin S. Cheng; Vladimir V. Korolkov; YongJin Cho; Christopher J. Mellor; C. Thomas Foxon; Andrei N. Khlobystov; Kenji Watanabe; Takashi Taniguchi; Laurence Eaves; Sergei V. Novikov; Peter H. Beton; Alex Summerfield; Andrew Davies; Tin S. Cheng; Vladimir V. Korolkov; YongJin Cho; Christopher J. Mellor; C. Thomas Foxon; Andrei N. Khlobystov; Kenji Watanabe; Takashi Taniguchi; Laurence Eaves; Sergei V. Novikov; Peter H. Beton

doi:10.1038/srep22440

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Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Alex Summerfield, Andrew Davies, Tin S. Cheng, Vladimir V. Korolkov, YongJin Cho, Christopher J. Mellor, C. Thomas Foxon, Andrei N. Khlobystov, Kenji Watanabe, Takashi Taniguchi, Laurence Eaves, Sergei V. Novikov, Peter H. Beton.

Scientific Reports 6 [1] 22440. 2016.

https://doi.org/10.1038/srep22440

Open Access Springer Nature (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 18:05:16 +0900 更新時刻: 2026-10-30 09:10:06 +0900