Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Alex Summerfield; Andrew Davies; Tin S. Cheng; Vladimir V. Korolkov; YongJin Cho; Christopher J. Mellor; C. Thomas Foxon; Andrei N. Khlobystov; Kenji Watanabe; Takashi Taniguchi; Laurence Eaves; Sergei V. Novikov; Peter H. Beton; Alex Summerfield; Andrew Davies; Tin S. Cheng; Vladimir V. Korolkov; YongJin Cho; Christopher J. Mellor; C. Thomas Foxon; Andrei N. Khlobystov; Kenji Watanabe; Takashi Taniguchi; Laurence Eaves; Sergei V. Novikov; Peter H. Beton

doi:10.1038/srep22440

Strain-Engineered Graphene Grown on Hexagonal Boron Nitride by Molecular Beam Epitaxy

Alex Summerfield, Andrew Davies, Tin S. Cheng, Vladimir V. Korolkov, YongJin Cho, Christopher J. Mellor, C. Thomas Foxon, Andrei N. Khlobystov, Kenji Watanabe, Takashi Taniguchi, Laurence Eaves, Sergei V. Novikov, Peter H. Beton.

Scientific Reports 6 [1] 22440. 2016.

https://doi.org/10.1038/srep22440

Open Access Springer Nature (Publisher)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2016-05-24 18:05:16 +0900Updated at: 2024-03-31 18:43:18 +0900