HOME > 論文 > 書誌詳細Evidence for Defect-Mediated Tunneling in Hexagonal Boron Nitride-Based JunctionsU. Chandni, K. Watanabe, T. Taniguchi, J. P. Eisenstein. Nano Letters 15 [11] 7329-7333. 2015.https://doi.org/10.1021/acs.nanolett.5b02625 NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-07-11 14:08:18 +0900更新時刻: 2024-03-31 19:01:26 +0900
