Direct observation of bias-dependence potential distribution in metal/HfO<sub>2</sub> gate stack structures by hard x-ray photoelectron spectroscopy under device operation | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Direct observation of bias-dependence potential distribution in metal/HfO₂ gate stack structures by hard x-ray photoelectron spectroscopy under device operation
(Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by hard x-ray photoelectron spectroscopy under device operation)

Y. Yamashita, H. Yoshikawa, T. Chikyo, K. Kobayashi.

Journal of Applied Physics 115 [4] 043721. 2014.

https://doi.org/10.1063/1.4863637

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作成時刻: 2016-05-24 17:20:10 +0900 更新時刻: 2026-09-29 07:52:53 +0900

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