Direct observation of bias-dependence potential distribution in metal/HfO<sub>2</sub> gate stack structures by hard x-ray photoelectron spectroscopy under device operation | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by hard x-ray photoelectron spectroscopy under device operation
(Direct observation of bias-dependence potential distribution in metal/HfO2 gate stack structures by hard x-ray photoelectron spectroscopy under device operation)

Y. Yamashita, H. Yoshikawa, T. Chikyo, K. Kobayashi.

Journal of Applied Physics 115 [4] 043721. 2014.

https://doi.org/10.1063/1.4863637

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:20:10 +0900更新時刻: 2024-03-31 15:54:17 +0900

▲ページトップへ移動