Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor
(Gate-tunable thermal metal-insulator transition in VO2 in van der Waals contact with an atomically thin semiconductor)

著者	Mahito Yamamoto, Ryo Nouchi, Teruo Kanki, Azusa N. Hattori, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Hidekazu Tanaka.
掲載誌名	ACS Applied Materials & Interfaces 11 [3] 3224-3230 ISSN: 19448252, 19448244 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	American Chemical Society (ACS)
発表年	2019
言語	English
DOI	https://doi.org/10.1021/acsami.8b18745
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