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Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor
(Gate-tunable thermal metal-insulator transition in VO2 in van der Waals contact with an atomically thin semiconductor)

Mahito Yamamoto, Ryo Nouchi, Teruo Kanki, Azusa N. Hattori, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Hidekazu Tanaka.
ACS Applied Materials & Interfaces 11 [3] 3224-3230. 2019.
https://doi.org/10.1021/acsami.8b18745

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    Created at: 2019-03-01 11:45:47 +0900Updated at: 2024-04-02 01:59:05 +0900

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