Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor
(Gate-tunable thermal metal-insulator transition in VO2 in van der Waals contact with an atomically thin semiconductor)
| Author(s) | Mahito Yamamoto, Ryo Nouchi, Teruo Kanki, Azusa N. Hattori, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Hidekazu Tanaka. |
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| Journal title | ACS Applied Materials & Interfaces 11 [3] 3224-3230 ISSN: 19448252, 19448244 ESI category: MATERIALS SCIENCE |
| Publisher | American Chemical Society (ACS) |
| Year of publication | 2019 |
| Language | English |
| DOI | https://doi.org/10.1021/acsami.8b18745 |
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