Gate-Tunable Thermal Metal–Insulator Transition in VO2 Monolithically Integrated into a WSe2 Field-Effect Transistor
(Gate-tunable thermal metal-insulator transition in VO2 in van der Waals contact with an atomically thin semiconductor)
| 著者 | Mahito Yamamoto, Ryo Nouchi, Teruo Kanki, Azusa N. Hattori, Kenji Watanabe, Takashi Taniguchi, Keiji Ueno, Hidekazu Tanaka. |
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| 掲載誌名 | ACS Applied Materials & Interfaces 11 [3] 3224-3230 ISSN: 19448252, 19448244 ESIでのカテゴリ: MATERIALS SCIENCE |
| 出版社 | American Chemical Society (ACS) |
| 発表年 | 2019 |
| 言語 | English |
| DOI | https://doi.org/10.1021/acsami.8b18745 |
| この文献をMendeleyにインポート |  |