HOME > 論文 > 書誌詳細High-performance ambipolar MoS2 transistor enabled by indium edge contactsHai Yen Le Thi, Muhammad Atif Khan, A Venkatesan, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim. Nanotechnology 32 [21] 215701. 2021.https://doi.org/10.1088/1361-6528/abe438 NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-03-17 03:00:19 +0900更新時刻: 2024-04-02 04:02:28 +0900
