HOME > Article > DetailHigh-performance ambipolar MoS2 transistor enabled by indium edge contactsHai Yen Le Thi, Muhammad Atif Khan, A Venkatesan, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim. Nanotechnology 32 [21] 215701. 2021.https://doi.org/10.1088/1361-6528/abe438 NIMS author(s)WATANABE, KenjiTANIGUCHI, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2021-03-17 03:00:19 +0900Updated at: 2024-04-02 04:02:28 +0900
