High mobility field-effect transistors based on MoS2 crystals grown by the flux method
(High mobility field effect transistors based on MoS2 crystal grown by flux method)

著者	Vilas Patil, Jihyun Kim, Khushabu Agrawal, Tuson Park, Junsin Yi, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim.
掲載誌名	Nanotechnology 32 [32] 325603 ISSN: 13616528, 09574484 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	IOP Publishing
発表年	2021
言語	English
DOI	https://doi.org/10.1088/1361-6528/abf6f1
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High mobility field-effect transistors based on MoS2 crystals grown by the flux method(High mobility field effect transistors based on MoS2 crystal grown by flux method)