High mobility field-effect transistors based on MoS<sub>2</sub> crystals grown by the flux method | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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High mobility field-effect transistors based on MoS2 crystals grown by the flux method
(High mobility field effect transistors based on MoS2 crystal grown by flux method)

Vilas Patil, Jihyun Kim, Khushabu Agrawal, Tuson Park, Junsin Yi, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim.

Nanotechnology 32 [32] 325603. 2021.

https://doi.org/10.1088/1361-6528/abf6f1

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作成時刻: 2021-06-01 03:00:16 +0900更新時刻: 2024-04-02 03:22:34 +0900

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