High mobility field-effect transistors based on MoS<sub>2</sub> crystals grown by the flux method | SAMURAI, NIMS Researchers Directory Service

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High mobility field-effect transistors based on MoS2 crystals grown by the flux method
(High mobility field effect transistors based on MoS2 crystal grown by flux method)

Vilas Patil, Jihyun Kim, Khushabu Agrawal, Tuson Park, Junsin Yi, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gil-Ho Kim.

Nanotechnology 32 [32] 325603. 2021.

https://doi.org/10.1088/1361-6528/abf6f1

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2021-06-01 03:00:16 +0900Updated at: 2024-04-02 03:22:34 +0900

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