HOME > Article > DetailVertical-type Schottky-barrier photodiode using p-diamond epilayer grown on heavily boron-doped p(+)-diamond substrate(導電性ダイヤモンド基板を用いた縦型ショットキーフォトダイオード)M. Imura, Y. Koide, M.Y. Liao, J. Alvarez. Diamond and Related Materials 17 [11] 1916-1921. 2008.https://doi.org/10.1016/j.diamond.2008.04.012 NIMS author(s)IMURA, MasatakaKOIDE, YasuoLIAO, MeiyongFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 15:41:39 +0900Updated at: 2024-04-01 18:41:12 +0900