Fabrication of Gate-Tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Han Sae Jung; Hsin-Zon Tsai; Dillon Wong; Chad Germany; Salman Kahn; Youngkyou Kim; Andrew S. Aikawa; Dhruv K. Desai; Griffin F. Rodgers; Aaron J. Bradley; Jairo Velasco; Kenji Watanabe; Takashi Taniguchi; Feng Wang; Alex Zettl; Michael F. Crommie

doi:10.3791/52711

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
(Fabrication of Gate-Tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities)

Han Sae Jung, Hsin-Zon Tsai, Dillon Wong, Chad Germany, Salman Kahn, Youngkyou Kim, Andrew S. Aikawa, Dhruv K. Desai, Griffin F. Rodgers, Aaron J. Bradley, Jairo Velasco, Kenji Watanabe, Takashi Taniguchi, Feng Wang, Alex Zettl, Michael F. Crommie.

Journal of Visualized Experiments [101] . 2015.

https://doi.org/10.3791/52711

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-05-24 17:46:57 +0900更新時刻: 2024-03-31 18:39:02 +0900

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities(Fabrication of Gate-Tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
(Fabrication of Gate-Tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities)