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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
(Fabrication of Gate-Tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities)

Han Sae Jung, Hsin-Zon Tsai, Dillon Wong, Chad Germany, Salman Kahn, Youngkyou Kim, Andrew S. Aikawa, Dhruv K. Desai, Griffin F. Rodgers, Aaron J. Bradley, Jairo Velasco, Kenji Watanabe, Takashi Taniguchi, Feng Wang, Alex Zettl, Michael F. Crommie.

NIMS author(s)


Fulltext and dataset(s) on Materials Data Repository (MDR)


    Created at: 2016-05-24 17:46:57 +0900Updated at: 2024-03-31 18:39:02 +0900

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