Reversible and Precisely Controllable p/n-Type Doping of MoTe2  Transistors through Electrothermal Doping

Yuan-Ming Chang; Shih-Hsien Yang; Che-Yi Lin; Chang-Hung Chen; Chen-Hsin Lien; Wen-Bin Jian; Keiji Ueno; Yuen-Wuu Suen; Kazuhito Tsukagoshi; Yen-Fu Lin

doi:10.1002/adma.201706995

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Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

Yuan-Ming Chang, Shih-Hsien Yang, Che-Yi Lin, Chang-Hung Chen, Chen-Hsin Lien, Wen-Bin Jian, Keiji Ueno, Yuen-Wuu Suen, Kazuhito Tsukagoshi, Yen-Fu Lin.

Advanced Materials 30 [13] 1706995. 2018.

https://doi.org/10.1002/adma.201706995

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2018-04-07 21:10:41 +0900更新時刻: 2024-03-29 23:56:05 +0900