Reversible and Precisely Controllable p/n-Type Doping of MoTe2  Transistors through Electrothermal Doping

Yuan-Ming Chang; Shih-Hsien Yang; Che-Yi Lin; Chang-Hung Chen; Chen-Hsin Lien; Wen-Bin Jian; Keiji Ueno; Yuen-Wuu Suen; Kazuhito Tsukagoshi; Yen-Fu Lin; Yuan-Ming Chang; Shih-Hsien Yang; Che-Yi Lin; Chang-Hung Chen; Chen-Hsin Lien; Wen-Bin Jian; Keiji Ueno; Yuen-Wuu Suen; Kazuhito Tsukagoshi; Yen-Fu Lin

doi:10.1002/adma.201706995

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping

Yuan-Ming Chang, Shih-Hsien Yang, Che-Yi Lin, Chang-Hung Chen, Chen-Hsin Lien, Wen-Bin Jian, Keiji Ueno, Yuen-Wuu Suen, Kazuhito Tsukagoshi, Yen-Fu Lin.

Advanced Materials 30 [13] 1706995. 2018.

https://doi.org/10.1002/adma.201706995

NIMS author(s)

TSUKAGOSHI, Kazuhito

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2018-04-07 21:10:41 +0900 Updated at: 2025-06-13 05:15:10 +0900