HOME > Article > DetailUnraveling the Resistive Switching Mechanisms in LaMnO3+δ-Based Memristive Devices by Operando Hard X-ray Photoemission MeasurementsBenjamin Meunier, Eugénie Martinez, Raquel Rodriguez-Lamas, Dolors Pla, Monica Burriel, Carmen Jimenez, Yoshiyuki Yamashita, Olivier Renault. ACS Applied Electronic Materials 3 [12] 5555-5562. 2021.https://doi.org/10.1021/acsaelm.1c00968 NIMS author(s)YAMASHITA, YoshiyukiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2022-01-05 03:24:53 +0900Updated at: 2024-03-31 14:17:46 +0900