HOME > Profile > FUKATA, Naoki
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- 305-0044 1-1 Namiki Tsukuba Ibaraki JAPAN [Access]
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ナノ材料・ナノバイオサイエンス 物性I 応用物性・結晶工学
PublicationsNIMS affiliated publications since 2004.
Research papers
- 深田 直樹. IV 族半導体ナノワイヤの成長と不純物ドーピング制御. Journal of the Japanese Association for Crystal Growth. (2019) 46-2-01-46-2-01
- Daniel T. Payne, Whitney A. Webre, Yoshitaka Matsushita, Nianyong Zhu, Zdenĕk Futera, Jan Labuta, Wipakorn Jevasuwan, Naoki Fukata, John S. Fossey, Francis D’Souza, Katsuhiko Ariga, Wolfgang Schmitt, Jonathan P. Hill. Multimodal switching of a redox-active macrocycle. Nature Communications. 10 [1] (2019) 10.1038/s41467-019-08978-5
- Ryo Matsumura, Yunfan Wang, Wipakorn Jevasuwan, Naoki Fukata. Single grain growth of Si thin film on insulating substrate by limited region aluminum induced crystallization. Materials Letters. 252 (2019) 100-102 10.1016/j.matlet.2019.05.113
Proceedings
- FUKATA, Naoki, Takashi Oshima, Naoya Okada, Satoshi Matsushita, Takao Tsurui, CHEN, Jun, SEKIGUCHI, Takashi, Kouichi Murakami. Phonon Confinement and Impurity Doping in Silicon Nanowires Synthesized by Laser Ablation. SOLID STATE PHENOMENA. 2007, 553-558
- SEKIGUCHI, Takashi, CHEN, Jun, TAKASE, Masami, FUKATA, Naoki, CHIKYOW, Toyohiro, Motoyuki Sato, Ryu Hasunuma, Kikuo Yamabe, Yasuo Nar. Electron-beam-induced current study of breakdown behavior of high-k gate MOSFETs. SOLID STATE PHENOMENA. 2010, 461-466
- CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro. An Electron-Beam-Induced Current Investigation of Electrical Defects in High-k Gate Stacks. ECS Transcations. 2010, 299-313
Presentations
- CHEN, Jun, SEKIGUCHI, Takashi, FUKATA, Naoki, TAKASE, Masami, NEMOTO, Yoshihiro, Ryu Hasunuma, Kikuo Yamabe, Motoyuki Sato, Keisaku Yamada, CHIKYOW, Toyohiro. EBIC and TEM Investigations of Current Leakage Sites in High-k Gate Stacks. MANA International Symposium 2010. 2010
- MATSUMURA, Ryo, WANG, Yunfan, JEVASUWAN, Wipakorn, FUKATA, Naoki. Single domain poly-Si film on insulating substrate by limited region aluminum induced layer exchange growth. The 2018 E-MRS Fall Meeting and Exhibit. 2018
- Joko Suwardy, ジェバスワン ウイパコーン, Kaoru Toko, Takashi Suemasu, 深田 直樹. Solid Phase Epitaxy of Si Film on poly-Si Seed Layer formed by Aluminum-induced Crystallization. The 76th JSAP Autumn Meeting 2015. 2015
Patents
- No. 5137095 シリコンナノ結晶材料の製造方法及び該製造方法で製造されたシリコンナノ結晶材料 (2012)
- No. 5733655 シリコンナノ粒子／シリコンナノワイヤ複合材料、太陽電池、発光デバイス、及び製造法 (2015)
- No. 5495038 蛍光発光性シリコンナノ粒子とその製造方法 (2014)
Society memberships
応用物理学会
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