SAMURAI - NIMS Researchers Database

HOME > 会議録 > 書誌詳細

Wide Controllability of Flatband Voltage in La2O3 Gate Stack Structures – Remarkable Advantages of La2O3 over HfO2 –
(フラットバンド電圧特性制御に関するLa2O3のHfO2に対する優位性)

OHMORI, Kenji, ParhatAhmet, SHIRAISHI Kenji , YAMABE Kikuo, Heiji Watanabe, Yasushi Akasaka, UMEZAWA, Naoto, NAKAJIMA, Kiyomi, YOSHITAKE, Michiko, Takashi Nakayama, K. -S. Chang, Kuniyuki Kakushima, Yasuo Nara, M. L. Green, Hiroshi Iwai, YAMADA, Keisaku, CHIKYOW, Toyohiro.
ECS Transaction, Physics and Technology of high-k Gate Dielectrics III 351-362. 2006.

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

    作成時刻: 2017-02-27 01:09:27 +0900更新時刻: 2018-05-30 19:49:08 +0900

    ▲ページトップへ移動