HOME > Presentation > Detail多結晶Siにおける欠陥と残留歪の関係(Correlation between electrically active defects and residual strain in multicrystalline silicon)関口 隆史, 陳 君, 福澤理行, 山田正良. 第56回応用物理学関係連合講演会. 2009.NIMS author(s)CHEN, JunFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 05:51:40 +0900Updated at: 2017-07-10 20:29:25 +0900