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多結晶Siにおける欠陥と残留歪の関係
(Correlation between electrically active defects and residual strain in multicrystalline silicon)

関口 隆史, 陳 君, 福澤理行, 山田正良.
第56回応用物理学関係連合講演会. 2009.

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    Created at: 2017-01-08 05:51:40 +0900Updated at: 2017-07-10 20:29:25 +0900

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